The Applicability of 662 Kev r-Rays to Compton Profile Measurements

Author: Chu-Nan Chang, Ching-Iue Chen, Hong-Zong Chen, Fu-Kwun Hwang, Jean-Luh You

Abstract：

The 662 Kev γ-ray backscattered spectra of <100>-, <110>-and <111>-oriented Si and Ge were obtained by a HpGe low-energy detector. These spectra were then deconvoluted by a Fourier transformation technique. Compton profiles of <100>-, <110>- and <111>-oriented Si and Ge were deduced and compared with the existing data, which were obtained either by the method of lowenergy photons or by positron annihilation. The agreements are quite good, and we conclude that the Compton profile is γ-ray energy as high as 662 KeV. Cs137 can thus be considered as a good radioactive source for Compton Profile measurements. We have also found that the multiple scattering effect at this photon energy is more significant for Si than for Ge.

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