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The Transient Electrical Transport in Amorphous Semiconductors
Author: Hsien-Hsi Su(Department of Physics College of Sciences)

Abstract：

This paper ismainly concerned with the transient electric transport in amorphous semiconductors with very low energy excitation of infrared divergent nature. Moreover, it attempts to expound, with a modified Scher Montroll model, the discrepancy between temperature dependence of transit time given by time-of-fight experiments and other methods.

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